https://doi.org/10.1140/epjqt/s40507-024-00269-3
Research
Superconducting surface trap chips for microwave-driven trapped ions
1
Komaba Institute for Science (KIS), The University of Tokyo, 3-8-1 Komaba, 153-8902, Meguro, Tokyo, Japan
2
RIKEN Center for Quantum Computing (RQC), 2-1 Hirosawa, 351-0198, Wako, Saitama, Japan
3
Inamori Research Institute for Science (InaRIS), 620 Suiginya, 600-8411, Kyoto, Kyoto, Japan
a
tyuta@g.ecc.u-tokyo.ac.jp
d
u-atsushi@g.ecc.u-tokyo.ac.jp
Received:
22
July
2024
Accepted:
29
August
2024
Published online:
9
September
2024
Microwave-driven trapped ion logic gates offer a promising avenue for advancing beyond laser-based logic operations. In future microwave-based operations, however, the joule heat produced by large microwave currents flowing through narrow microwave electrodes would potentially hinder improvements in gate speed and fidelity. Moreover, scalability, particularly in cryogenic trapped ion systems, is impeded by the excessive joule heat. To address these challenges, we present a novel approach: superconducting surface trap chips that integrate high-Q microwave resonators with large current capacities. Utilizing sub-ampere microwave currents in superconducting Nb resonators, we generate substantial magnetic field gradients with significantly reduced losses compared to conventional metal chips. By harnessing the high Q factors of superconducting resonators, we propose a power-efficient two-qubit gate scheme capable of achieving a sub-milliwatt external microwave input power at a gate Rabi frequency of 1 kHz.
Key words: Quantum computing / Trapped ions / Superconducting resonators / Microwave
© The Author(s) 2024
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