https://doi.org/10.1140/epjqt/s40507-025-00358-x
Research
Full qubit control of the double quantum transition in NV centers for low-field or high-frequency sensing
Área de Física Aplicada, Universidad Politécnica de Cartagena, 30202, Cartagena, Spain
Received:
25
July
2024
Accepted:
30
April
2025
Published online:
15
May
2025
We present a scheme for the implementation of fast arbitrary qubit gates in the ground state of the negatively charged nitrogen-vacancy (NV) defect in diamond. The protocol is especially useful for sensing in two regimes: on the one hand, in the low-field limit where the Zeeman splitting of the NV-center is smaller than the MW Rabi frequency; on the other hand, for the detection of high-frequency signals, comparable to the Zeeman splitting of the NV center. It constitutes an extension to the NV-ERC technique, which has demonstrated efficient initialization and readout of the double quantum transition with no leakage to any third level thanks to an effective Raman coupling. Here we derive a full theoretical framework of the scheme, identifying the complete unitary associated to the approach, and more specifically the relevant basis transformation for each of two characteristic pulse durations. Based on this insight, we propose a scheme to perform fast single qubit gates in the double quantum transition. We study its robustness with respect to pulse-timing errors resulting from faulty identification of system parameters or phase-control limitations. We finally demonstrate that the technique can also be implemented in the presence of unknown electric or strain fields and numerically test its effectiveness in a Hahn echo sequence in the high-frequency or low-field regime.
Key words: Quantum Sensing / NV Centers / Raman coupling / Nanoscale Nuclear Magnetic Resonance / Low Magnetic Field / High Frequency
© The Author(s) 2025
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